View MRF5P21180HR6_4248502.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Freescale Semiconductor Technical Data
Document Number: MRF5P21180HR6 Rev. 2, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. * Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 38 Watts Avg., Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 14 dB Drain Efficiency -- 25.5% IM3 @ 10 MHz Offset -- - 37.5 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 41 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Low Gold Plating Thickness on Leads, 40 Nominal. * RoHS Compliant * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF5P21180HR6
2170 MHz, 38 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFET
CASE 375D - 05, STYLE 1 NI - 1230
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 530 3.0 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 180 W CW Case Temperature 71C, 38 W CW Symbol RJC Value (1,2) 0.31 0.33 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5P21180HR6 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol IDSS IDSS IGSS
Min -- -- --
Typ -- -- --
Max 10 1 1
Unit Adc Adc Adc
Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (3) (VDS = 28 Vdc, ID = 1600 mAdc) Drain- Source On - Voltage (1) (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (1) (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th) VGS(Q) VDS(on) gfs
2.5 -- -- --
2.8 3.6 0.26 5
3.5 -- 0.3 --
Vdc Vdc Vdc S
Crss
--
1.7
--
pF
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 38 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push - pull configuration. Gps D IM3 ACPR IRL 12.5 23 -- -- -- 14 25.5 - 37.5 - 41 - 14 -- -- - 35 - 38 -9 dB % dBc dBc dB
MRF5P21180HR6 2 RF Device Data Freescale Semiconductor
VBIAS R1 R6 + C23 C13
R2 C8 Z15 C11 C5 Z11 Z13 Z24 Z17
+ C9
C16
+ C18
+ C19
+ VSUPPLY C20
Z19 C4
Z3 C1 RF INPUT Z1 Z2
Z5
Z7
Z25
Z9
DUT
Z21
Z22
RF OUTPUT
Z4 C2
Z6
Z8
Z26
Z10
Z14 VBIAS R4 R5 + C24 C14 C12 C6 R3 Z12
Z23
Z18 C3
Z20
Z16 + C10 + C17 + C21 + VSUPPLY C22
C7
C15
Z1, Z22 Z2, Z21 Z3, Z20 Z4, Z19 Z5, Z6 Z7, Z8 Z9, Z10
1.000 x 0.066 Microstrip 0.760 x 0.113 Microstrip 0.068 x 0.066 Microstrip 1.672 x 0.066 Microstrip 0.318 x 0.066 Microstrip 0.284 x 0.180 Microstrip 0.094 x 0.650 Microstrip
Z11, Z12 Z13, Z14 Z15, Z16 Z17, Z18 Z23, Z24 Z25, Z26 PCB
1.030 x 0.035 Microstrip 0.083 x 0.650 Microstrip 0.550 x 0.058 Microstrip 0.353 x 0.066 Microstrip 0.417 x 0.650 Microstrip 0.161 x 0.650 Microstrip Taconic RF - 35, 0.030, r = 3.5
Figure 1. MRF5P21180HR6 Test Circuit Schematic Table 5. MRF5P21180HR6 Test Circuit Component Designations and Values
Part C1, C2, C3, C4 C5, C6, C7, C8 C9, C10 C11, C12 C13, C14, C15, C16 C17, C18, C19, C20, C21, C22 C23, C24 R1, R2, R3, R4 R5, R6 Description 30 pF Chip Capacitors 5.6 pF Chip Capacitors 10 F Tantalum Capacitors 1000 pF Chip Capacitors 0.1 F Chip Capacitors 22 F Tantalum Capacitors 1.0 F Tantalum Capacitors 10 W, 1/8 W Chip Resistors 1.0 kW, 1/8 W Chip Resistor Part Number 100B300JCA500X 100B5R6JCA500X T495X106K035AS4394 100B102JCA500X CDR33BX104AKWS T491X226K035AS4394 T491C105M050 ATC ATC Kemet ATC Kemet Kemet Kemet Manufacturer
MRF5P21180HR6 RF Device Data Freescale Semiconductor 3
C23 VGG R6 R1
C13 C11
C16 C18 C19
R2
C5 C8 C9 C20
VDD
C1 CUT OUT AREA
C4
C2
C3 C22 C7 C10 VDD
VGG
R5
R4 C24
R3
C6
C14 C12
C15 C17 C21
MRF5P21180 Rev 5
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF5P21180HR6 Test Circuit Component Layout
MRF5P21180HR6 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -10 -15 -20 -25 -30 -35 1200 mA -45 1600 mA -50 300 20 40 60 80 100 200 300 Pout, OUTPUT POWER (WATTS) PEP IRL, INPUT RETURN LOSS (dB) 15 14 13 G ps , POWER GAIN (dB) 12 11 10 9 8 7 6 5 2080 IM3 ACPR IRL Gps D VDD = 28 Vdc, Pout = 38 W (Avg.), IDQ = 1600 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) 40 35 30 25 20 -20 -25 -30 -35 -40 2120 2140 2160 2180 -45 2200
2100
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
15 IDQ = 2400 mA 14.5 G ps , POWER GAIN (dB) 2000 mA 1600 mA 1200 mA 13.5 800 mA 13 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing 20 40 60 80 100 200 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
-20 -25 -30 -35 -40 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing IDQ = 800 mA 2400 mA 2000 mA
14
12.5
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus Output Power
Figure 5. Third Order Intermodulation Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
-20 -25 -30 -35 -40 -45 7th Order -50 -55 -60 0.1 VDD = 28 Vdc, Pout = 170 W (PEP), IDQ = 1600 mA Two-Tone Measurements (f1+f2)/2 = Center Frequency of 2140 MHz 1 TWO-TONE SPACING (MHz) 10 20 30 5th Order 3rd Order Pout , OUTPUT POWER (dBm)
58 56 P3dB = 53.72 dBm (236 W) 54 P1dB = 52.99 dBm (199 W) 52 50 48 46 44 42 30 32 34 VDD = 28 Vdc, IDQ = 1600 mA Pulsed CW, 8 sec(on), 1 msec (off) f = 2140 MHz 36 38 40 42 Actual Ideal
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products versus Tone Spacing
Figure 7. Pulse CW Output Power versus Input Power
MRF5P21180HR6 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
40 35 30 25 20 15 10 ACPR 5 0 4 6 8 10 30 50 Pout, OUTPUT POWER (WATTS) W-CDMA Gps D VDD = 28 Vdc, IDQ = 1600 mA f1 = 2135 MHz, f2 = 2145 MHz 2 x W-CDMA, 10 MHz @ 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF)
-15 MTTF FACTOR (HOURS x AMPS 2) -20 -25 IM3 (dBc), ACPR (dBc) -30 -35 IM3 -40 -45 -50 -55
1010
109
108
107 100
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 8. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
Figure 9. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) (dB) -20 -30 -40 -50 -60 -70 -80 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF -90 -100 -110 -120 -25 -ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW -IM3 in 3.84 MHz BW -20 -15 -10 -5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 3.84 MHz Channel BW
f, FREQUENCY (MHz)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal
Figure 11. 2-Carrier W-CDMA Spectrum
MRF5P21180HR6 6 RF Device Data Freescale Semiconductor
Zo = 25
Zload f = 2110 MHz f = 2170 MHz f = 2170 MHz Zsource
f = 2110 MHz
VDD = 28 Vdc, IDQ = 1600 mA, Pout = 38 W Avg. f MHz 2110 2140 2170 Zsource 5.39 - j13.89 5.66 - j13.99 5.53 - j14.51 Zload 3.69 - j10.51 3.81 - j10.66 3.79 - j11.05
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
- Z source Z
+ load
Figure 12. Series Equivalent Source and Load Impedance
MRF5P21180HR6 RF Device Data Freescale Semiconductor 7
NOTES
MRF5P21180HR6 8 RF Device Data Freescale Semiconductor
NOTES
MRF5P21180HR6 RF Device Data Freescale Semiconductor 9
NOTES
MRF5P21180HR6 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
2X
Q bbb
M
A
A G4 L
1 2
TA
M
B
M
B
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.082 0.090 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.08 2.29 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF
3 4X
4
K aaa
M
4X
(FLANGE)
B
D
TA
M
B
M
ccc ccc
M
M
TA
(LID)
M
B
M
TA N (LID)
M
B
M
R
H C
F
E
PIN 5 M (INSULATOR) bbb
M
T
SEATING PLANE
(INSULATOR)
S
bbb
M
TA
M
B
M
TA
M
B
M
STYLE 1: PIN 1. 2. 3. 4. 5.
CASE 375D - 05 ISSUE E NI - 1230
MRF5P21180HR6 RF Device Data Freescale Semiconductor 11
How to Reach Us:
Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2005. All rights reserved.
MRF5P21180HR6
Rev. 12 2, 5/2006 Document Number: MRF5P21180HR6
RF Device Data Freescale Semiconductor

▲Up To Search▲

Price & Availability of MRF5P21180HR6

	To Download MRF5P21180HR6 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .